Manufacturer Part Number
FDP12N50
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel power MOSFET in a TO-220-3 package.
Product Features and Performance
High voltage, high current capability
Low on-resistance for high efficiency
High reliability and robustness
Suitable for a wide range of power conversion and control applications
Product Advantages
Excellent switching performance
High power density
Improved thermal management
Reliable and durable design
Key Technical Parameters
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30 V
Rds On (Max) @ Id, Vgs: 650 mOhm @ 6 A, 10 V
Current Continuous Drain (Id) @ 25°C: 11.5 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 25 V
Power Dissipation (Max): 165 W (Tc)
Vgs(th) (Max) @ Id: 5 V @ 250 A
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Quality and Safety Features
Meets industry quality and safety standards
Robust design for reliable operation
Extensive testing and quality control measures
Compatibility
Widely compatible with various power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Inverters
Converters
Industrial and consumer electronics
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High voltage and current capability
Excellent efficiency and thermal performance
Reliable and durable design
Suitability for a wide range of power applications
Compliance with industry quality and safety standards
