Manufacturer Part Number
FDP047N10
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET suitable for high-current, high-voltage applications
Product Features and Performance
Operates at temperatures from -55°C to 175°C
Drain-to-source voltage up to 100V
Extremely low on-resistance of 4.7mΩ @ 75A, 10V
High continuous drain current of 120A at 25°C
High input capacitance of 15265pF at 25V
Maximum power dissipation of 375W at 25°C
Product Advantages
Excellent thermal performance and power handling capability
Extremely low on-resistance for high efficiency
High current capability for demanding applications
Key Technical Parameters
N-channel MOSFET
TO-220-3 package
Gate-to-source voltage (max) of ±20V
Threshold voltage (max) of 4.5V @ 250A
Gate charge (max) of 210nC @ 10V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for use in a variety of high-power, high-voltage applications
Application Areas
Switch-mode power supplies
Motor drives
Electric vehicle systems
Industrial automation and control
Product Lifecycle
This product is an active, in-production part with no known plans for discontinuation
Replacement or upgrade options may be available from onsemi
Key Reasons to Choose This Product
Excellent thermal and power handling capabilities
Extremely low on-resistance for high efficiency
High current capability for demanding applications
Suitable for a wide range of high-power, high-voltage uses
Designed and manufactured to high quality standards