Manufacturer Part Number
FDP047N08
Manufacturer
onsemi
Introduction
The FDP047N08 is a high-performance N-channel power MOSFET from onsemi, designed for a wide range of power conversion and control applications.
Product Features and Performance
75V drain-to-source voltage
7mΩ maximum on-resistance
164A continuous drain current at 25°C
268W maximum power dissipation
Ultra-low gate charge of 152nC at 10V
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent power efficiency due to low on-resistance
High power density and thermal performance
Robust and reliable design for demanding applications
Optimized for high-frequency switching
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 75V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.7mΩ @ 80A, 10V
Continuous Drain Current (Id): 164A @ 25°C
Input Capacitance (Ciss): 9415pF @ 25V
Power Dissipation (Pd): 268W @ Tc
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of power electronics and control systems
Application Areas
Switching power supplies
Motor drives
Industrial and automotive power electronics
Telecom and server power systems
Product Lifecycle
Current production part
Replacement and upgrade options available
Key Reasons to Choose This Product
Exceptional power efficiency and thermal performance
Reliable and robust design for demanding applications
Optimized for high-frequency switching
Comprehensive technical parameters and features
Compatibility with a wide range of power electronics systems
FDP045N10A_F102ON/FSC