Manufacturer Part Number
FDMS7680
Manufacturer
onsemi
Introduction
High-performance N-channel Power MOSFET
Product Features and Performance
Optimized for high-frequency, high-efficiency switching applications
Low on-resistance for low conduction losses
High avalanche energy rating for enhanced reliability
Extremely low gate charge for fast switching
Product Advantages
Excellent RDS(on) performance
High avalanche ruggedness
Fast switching capability
Compact 8-PQFN (5x6) package
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 6.9mΩ @ 14A, 10V
Continuous Drain Current (ID): 14A (Ta), 28A (Tc)
Input Capacitance (Ciss): 1850pF @ 15V
Power Dissipation: 2.5W (Ta), 33W (Tc)
Gate Charge (Qg): 28nC @ 10V
Quality and Safety Features
Compliant with RoHS3 directive
Qualified to AEC-Q101 automotive standard
Compatibility
Suitable for high-frequency, high-efficiency switching applications
Application Areas
Automotive electronics
Industrial power supplies
DC-DC converters
Motor drives
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available
Key Reasons to Choose
Excellent RDS(on) performance for low conduction losses
High avalanche ruggedness for enhanced reliability
Fast switching capability for high-efficiency operation
Compact 8-PQFN (5x6) package for space-constrained designs