Manufacturer Part Number
FDMS7672AS
Manufacturer
onsemi
Introduction
The FDMS7672AS is a high-performance N-channel MOSFET from onsemi, designed for use in power management and switching applications.
Product Features and Performance
30V drain-to-source voltage
4mOhm maximum on-resistance at 18A and 10V gate-to-source voltage
19A continuous drain current at 25°C ambient temperature
42A continuous drain current at 25°C case temperature
Low input capacitance of 2820pF at 15V
Maximum power dissipation of 2.5W at 25°C ambient temperature and 46W at 25°C case temperature
Product Advantages
High efficiency and low power loss
Optimized for synchronous rectification and high-frequency switching
Suitable for high-current, high-power applications
Key Technical Parameters
N-channel MOSFET
±20V maximum gate-to-source voltage
3V maximum gate threshold voltage at 1mA drain current
46nC maximum gate charge at 10V gate-to-source voltage
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Surface mount package (8-PQFN 5x6)
Compatible with standard MOSFET driving and control circuitry
Application Areas
Power supplies
DC-DC converters
Motor drives
Industrial and consumer electronics
Product Lifecycle
Currently in production
No discontinuation planned
Replacement or upgrade options available from onsemi
Key Reasons to Choose This Product
Excellent performance and efficiency
Optimized for high-frequency, high-power applications
Reliable and high-quality design from a reputable manufacturer
Wide range of compatible applications
