Manufacturer Part Number
FDMS3606S
Manufacturer
onsemi
Introduction
The FDMS3606S is a dual N-channel enhancement mode power MOSFET with asymmetrical configuration designed for high-efficiency DC-DC converters, synchronous rectifiers, and other power management applications.
Product Features and Performance
30V Drain-Source Voltage (Vdss)
8mΩ maximum on-resistance (Rds(on)) at 13A, 10V
1785pF maximum input capacitance (Ciss) at 15V
29nC maximum gate charge (Qg) at 10V
Logic-level gate drive
-55°C to 150°C operating temperature range
Product Advantages
High efficiency due to low on-resistance
Optimized for high-frequency switching applications
Compact PowerTDFN package for high power density
Logic-level gate drive simplifies design
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 8mΩ max @ 13A, 10V
Continuous Drain Current (Id): 13A @ 25°C, 27A max
Input Capacitance (Ciss): 1785pF max @ 15V
Gate Charge (Qg): 29nC max @ 10V
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Qualified to AEC-Q101 automotive standards
Compatibility
Suitable for various power management applications, including DC-DC converters, synchronous rectifiers, and other power circuits
Application Areas
High-efficiency power conversion
Automotive electronics
Industrial power supplies
Telecommunications equipment
Consumer electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent efficiency due to low on-resistance
Compact and thermally efficient PowerTDFN package
Wide operating temperature range suitable for harsh environments
Logic-level gate drive simplifies design and reduces system complexity
Proven reliability and quality with AEC-Q101 automotive qualification
