Manufacturer Part Number
FDMS3602S
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET in a compact PowerTDFN package
Product Features and Performance
Dual N-channel MOSFET
Optimized for high-frequency, high-efficiency power conversion applications
Low on-resistance for low conduction losses
High power density and efficiency
Fast switching speed
Reduced gate charge for improved efficiency
Product Advantages
Compact package for space-limited designs
Improved thermal performance
Increased power density and efficiency
Key Technical Parameters
Drain to Source Voltage (Vdss): 25V
On-Resistance (Rds(on)): 5.6mOhm @ 15A, 10V
Continuous Drain Current (Id): 15A @ 25°C, 26A
Input Capacitance (Ciss): 1680pF @ 13V
Gate Threshold Voltage (Vgs(th)): 3V @ 250A
Gate Charge (Qg): 27nC @ 10V
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable PowerTrench MOSFET technology
Compatibility
Surface mount package, compatible with standard SMT assembly processes
Application Areas
Ideal for high-frequency, high-efficiency power conversion applications such as:
- Synchronous rectification
- DC-DC converters
- Motor drives
- Power supplies
Product Lifecycle
This product is currently in active production and widely available.
Key Reasons to Choose This Product
Excellent performance and efficiency due to low on-resistance and fast switching characteristics
Compact, space-saving PowerTDFN package
Reliable and robust PowerTrench technology
Wide operating temperature range
Compatibility with standard SMT assembly processes
