Manufacturer Part Number
FDMS3572
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor designed for power management and control applications.
Product Features and Performance
Optimized for low on-resistance (RDS(on)) and high switching speed
Supports high current capacity up to 22A continuous drain current
Wide operating temperature range from -55°C to 150°C
Low input capacitance of 2490 pF for efficient switching
Capable of handling up to 2.5W power dissipation at 25°C ambient temperature
Product Advantages
Excellent thermal performance and efficiency
Robust design for reliable operation
Suitable for a wide range of power conversion and control applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 80V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 16.5mΩ @ 8.8A, 10V
Continuous Drain Current (ID): 8.8A (Ta), 22A (Tc)
Input Capacitance (Ciss): 2490 pF @ 40V
Power Dissipation (Pd): 2.5W (Ta), 78W (Tc)
Quality and Safety Features
RoHS3 compliant
Housed in a compact 8-MLP (5x6), Power56 package
Compatibility
Suitable for a wide range of power management and control applications, including:
Switching power supplies
Motor drives
Solar inverters
Battery charging systems
Industrial and automotive electronics
Application Areas
Power conversion and control
Motor control
Lighting and industrial automation
Automotive electronics
Renewable energy systems
Product Lifecycle
This product is currently in active production and there are no plans for discontinuation. Replacements or upgrades may become available in the future as technology evolves.
Several Key Reasons to Choose This Product
High performance and efficiency with low on-resistance and fast switching
Robust design for reliable operation in harsh environments
Versatile compatibility for a wide range of power management and control applications
Compact and thermally efficient package for space-constrained designs
RoHS3 compliance for environmental sustainability
