Manufacturer Part Number
FDMC2610
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor in a compact 8-MLP (3.3x3.3) package
Product Features and Performance
Drain to Source Voltage (Vdss) of 200V
Low On-Resistance (Rds(on)) of 200mΩ @ 2.2A, 10V
Continuous Drain Current (Id) of 2.2A (Ta), 9.5A (Tc)
Wide Operating Temperature Range of -55°C to 150°C
Low Input Capacitance (Ciss) of 960pF @ 100V
Low Gate Charge (Qg) of 18nC @ 10V
Surface Mount Packaging for Easy Integration
Product Advantages
High Voltage Handling Capability
Low Power Losses
Compact and Efficient Design
Wide Temperature Range Operation
Suitable for High-Frequency Switching Applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs) Max: ±20V
Rds(on) Max @ Id, Vgs: 200mΩ @ 2.2A, 10V
Continuous Drain Current (Id) @ 25°C: 2.2A (Ta), 9.5A (Tc)
Input Capacitance (Ciss) Max @ Vds: 960pF @ 100V
Power Dissipation Max: 2.1W (Ta), 42W (Tc)
Vgs(th) Max @ Id: 4V @ 250A
Drive Voltage (Max Rds(on), Min Rds(on)): 6V, 10V
Gate Charge (Qg) Max @ Vgs: 18nC @ 10V
Quality and Safety Features
RoHS3 Compliant
8-MLP (3.3x3.3) Package with Tape & Reel Packaging
Compatibility
Suitable for a Wide Range of Power Electronics Applications
Application Areas
Switching Power Supplies
Motor Drives
Industrial Controls
Inverters
Converters
Product Lifecycle
Current Product, No Discontinuation Planned
Replacements and Upgrades Available
Key Reasons to Choose This Product
High Voltage Handling Capability
Low On-Resistance for Efficient Power Conversion
Compact and Efficient Package Design
Wide Operating Temperature Range
Suitable for High-Frequency Switching Applications
RoHS Compliance for Environmental Considerations
