Manufacturer Part Number
FDMC15N06
Manufacturer
onsemi
Introduction
This is a discrete semiconductor product, specifically a transistor FET, MOSFET single.
Product Features and Performance
N-channel MOSFET transistor
55V drain-source voltage
Maximum gate-source voltage of ±20V
On-resistance of 900mΩ at 15A, 10V
Continuous drain current of 2.4A at 25°C (Ta), 15A at case temperature (Tc)
Input capacitance of 350pF at 25V
Power dissipation of 2.3W at 25°C (Ta), 35W at case temperature (Tc)
Gate charge of 11.5nC at 10V
Operating temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for efficient power conversion
High drain current handling capability
Compact 8-MLP (3.3x3.3) package
Key Technical Parameters
MOSFET technology
N-channel FET type
55V drain-source voltage
±20V maximum gate-source voltage
900mΩ on-resistance at 15A, 10V
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount package
Application Areas
Power conversion and management circuits
Motor control
Switching power supplies
Product Lifecycle
Current production model, no indication of discontinuation
Several Key Reasons to Choose This Product
Low on-resistance for efficient power handling
High current capability
Compact package size
Wide operating temperature range
RoHS3 compliance for environmental responsibility
