FDD6670A - onsemi

Manufacturer Part Number

FDD6670A

Manufacturer

onsemi

Introduction

High-performance power MOSFET transistor

Product Features and Performance

Low on-resistance for high efficiency

Optimized gate charge for fast switching

Wide operating temperature range of -55°C to 175°C

High current rating of 15A (Ta) and 66A (Tc)

Low input capacitance of 1755 pF @ 15V

High power dissipation of 3.2W (Ta) and 63W (Tc)

Product Advantages

Excellent thermal performance

Reliable and robust design

Efficient power switching

Key Technical Parameters

30V drain-to-source voltage (Vdss)

±20V gate-to-source voltage (Vgs)

8mΩ maximum on-resistance (Rds(on)) at 15A, 10V

N-channel MOSFET technology

3V maximum gate threshold voltage (Vgs(th)) at 250A

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

TO-252-3, DPak (2 Leads + Tab), SC-63 package

Surface mount (SMD) mounting type

Application Areas

Switched-mode power supplies

Motor drives

Battery charging systems

Industrial and consumer electronics

Product Lifecycle

Current production, no known discontinuation plans

Replacements and upgrades may be available from the manufacturer

Key Reasons to Choose This Product

Excellent thermal management and high power density

Fast and efficient switching performance

Robust and reliable design for demanding applications

Wide operating temperature range for versatile use

RoHS compliance for environmental responsibility