Manufacturer Part Number
FDD6670A
Manufacturer
onsemi
Introduction
High-performance power MOSFET transistor
Product Features and Performance
Low on-resistance for high efficiency
Optimized gate charge for fast switching
Wide operating temperature range of -55°C to 175°C
High current rating of 15A (Ta) and 66A (Tc)
Low input capacitance of 1755 pF @ 15V
High power dissipation of 3.2W (Ta) and 63W (Tc)
Product Advantages
Excellent thermal performance
Reliable and robust design
Efficient power switching
Key Technical Parameters
30V drain-to-source voltage (Vdss)
±20V gate-to-source voltage (Vgs)
8mΩ maximum on-resistance (Rds(on)) at 15A, 10V
N-channel MOSFET technology
3V maximum gate threshold voltage (Vgs(th)) at 250A
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Surface mount (SMD) mounting type
Application Areas
Switched-mode power supplies
Motor drives
Battery charging systems
Industrial and consumer electronics
Product Lifecycle
Current production, no known discontinuation plans
Replacements and upgrades may be available from the manufacturer
Key Reasons to Choose This Product
Excellent thermal management and high power density
Fast and efficient switching performance
Robust and reliable design for demanding applications
Wide operating temperature range for versatile use
RoHS compliance for environmental responsibility
FDD6670A-NLAMI Semiconductor/onsemi