Manufacturer Part Number
FDD6637-F085
Manufacturer
onsemi
Introduction
This is a P-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for automotive and high-power applications.
Product Features and Performance
AEC-Q101 qualified for automotive use
PowerTrench technology for high efficiency and low on-resistance
Operates in the temperature range of -55°C to 150°C
Low on-resistance of 11.6 mOhm at 14A, 10V
Product Advantages
Excellent thermal performance and high power handling capability
Suitable for high-power switching and control applications
Robust design for reliable operation in harsh environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 35V
Maximum Gate-Source Voltage (Vgs): ±25V
Continuous Drain Current (Id) at 25°C: 21A
Input Capacitance (Ciss): 2370 pF at 20V
Power Dissipation (Tc): 68W
Quality and Safety Features
AEC-Q101 qualified for automotive applications
Robust design for reliable operation in harsh environments
Compatibility
Compatible with a wide range of high-power and automotive applications
Application Areas
Automotive electronics
Industrial power supplies
Motor drives
Switching power supplies
Product Lifecycle
The FDD6637-F085 is currently in production and available for purchase.
Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent thermal performance and high power handling capability
Suitable for high-power switching and control applications in automotive and industrial environments
Robust design for reliable operation in harsh conditions
AEC-Q101 qualified for automotive use
Efficient PowerTrench technology for low on-resistance and high efficiency
FDD6637-SB82222PAMI Semiconductor/onsemi