Manufacturer Part Number
FDBL0210N80
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor suitable for various power management and control applications.
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 80V
Very low on-state resistance (RDS(on)) of 2mΩ @ 80A, 10V
Continuous Drain Current (ID) of 240A at 25°C
Wide operating temperature range of -55°C to 175°C
Fast switching and low gate charge for efficient operation
Suitable for high-current, high-frequency power conversion and motor control applications
Product Advantages
Excellent power density and efficiency
Robust design for reliable operation
Compact surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80V
Gate-to-Source Voltage (Vgs): ±20V
On-state Resistance (RDS(on)): 2mΩ @ 80A, 10V
Continuous Drain Current (ID): 240A at 25°C
Input Capacitance (Ciss): 10,000pF @ 40V
Power Dissipation (Pd): 357W
Quality and Safety Features
RoHS3 compliant
Robust and reliable design for high-power applications
Compatibility
Suitable for various power management and control applications, including power conversion, motor control, and industrial automation.
Application Areas
Power supplies
Motor drives
Inverters
Industrial automation
Electric vehicles
Product Lifecycle
This product is an active and readily available component from onsemi.
Several Key Reasons to Choose This Product
Excellent power density and efficiency for high-current, high-frequency applications
Robust design and wide operating temperature range for reliable operation
Compact surface-mount package for space-constrained designs
Proven performance and reliability from a trusted manufacturer, onsemi