Manufacturer Part Number
FDBL0110N60
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high current carrying capability.
Product Features and Performance
Extremely low on-resistance of 1.1 milliohms at 80A, 10V
Continuous drain current of 300A at 25°C case temperature
Drain-source voltage up to 60V
Operating temperature range of -55°C to 175°C
Ultra-low gate charge of 220nC at 10V
Product Advantages
Excellent thermal performance and power handling
High efficiency and low switching losses
Suitable for high-current, high-power applications
Key Technical Parameters
Drain-source voltage (Vdss): 60V
Gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 1.1 milliohms
Continuous drain current (Id): 300A
Input capacitance (Ciss): 13650 pF
Power dissipation (Pd): 429W
Quality and Safety Features
RoHS3 compliant
Surface mount package (8-HPSOF)
Compatibility
Suitable for a wide range of high-power, high-current applications
Application Areas
Automotive electronics
Industrial motor drives
Switching power supplies
Renewable energy systems
Product Lifecycle
Currently in production
No plans for discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
Extremely low on-resistance for high efficiency
High current handling capability up to 300A
Wide operating temperature range of -55°C to 175°C
Small, surface mount package for compact designs
Proven reliability and performance in high-power applications
FDB9406-F085onsemiMOSFET N-CH 40V 110A D2PAK