Manufacturer Part Number
FCPF850N80Z
Manufacturer
onsemi
Introduction
The FCPF850N80Z is a high-voltage, high-efficiency N-channel MOSFET transistor from onsemi's SuperFET II series, designed for a wide range of power conversion and control applications.
Product Features and Performance
High voltage rating of 800V
Low on-resistance of 850mΩ at 3A, 10V
High continuous drain current of 6A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching capabilities with low gate charge of 29nC at 10V
High power dissipation of 28.4W
Product Advantages
Excellent energy efficiency due to low on-resistance
Reliable operation across wide temperature range
Compact TO-220 package with good thermal performance
Suitable for high-voltage power conversion applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 850mΩ @ 3A, 10V
Drain Current (Id): 6A @ 25°C
Input Capacitance (Ciss): 1315pF @ 100V
Power Dissipation (Pd): 28.4W
Quality and Safety Features
RoHS3 compliant
Robust TO-220 package with good thermal characteristics
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power conversion and control applications
Can be used as a direct replacement for similar high-voltage MOSFET transistors
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Telecommunications equipment
Product Lifecycle
The FCPF850N80Z is an actively supported product in onsemi's portfolio
Replacement or upgrade options may be available in the future as technology evolves
Key Reasons to Choose This Product
Excellent energy efficiency with low on-resistance
Reliable operation across wide temperature range
Compact and thermally efficient TO-220 package
Suitable for high-voltage power conversion applications
Robust design and high-quality manufacturing