Manufacturer Part Number
FCPF4300N80Z
Manufacturer
onsemi
Introduction
The FCPF4300N80Z is a high-voltage, N-channel Power MOSFET from onsemi's SuperFET II series. It is designed for use in a wide range of power switching applications.
Product Features and Performance
High drain-source breakdown voltage (800V)
Low on-resistance (4.3Ω @ 800mA, 10V)
Low gate charge (8.8nC @ 10V)
High continuous drain current (1.6A @ 25°C)
Wide operating temperature range (-55°C to 150°C)
Suitable for both high-voltage and high-current applications
Product Advantages
Excellent efficiency and low power loss
Robust and reliable performance
Suitable for various power conversion and control applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.3Ω @ 800mA, 10V
Continuous Drain Current (Id): 1.6A @ 25°C
Input Capacitance (Ciss): 355pF @ 100V
Power Dissipation (Pd): 19.2W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Through-hole mounting (TO-220-3 package)
Suitable for use in a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power factor correction circuits
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and has no plans for discontinuation.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for improved efficiency
Compact and reliable TO-220-3 package
Suitable for a wide range of power conversion applications
Backed by onsemi's reputation for quality and reliability
