Manufacturer Part Number
FCPF380N60E
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
600V Drain-to-Source Voltage
380mΩ Maximum On-Resistance @ 5A, 10V
2A Continuous Drain Current @ 25°C
31W Maximum Power Dissipation @ Tc
-55°C to 150°C Operating Temperature Range
1770pF Maximum Input Capacitance @ 25V
45nC Maximum Gate Charge @ 10V
Product Advantages
High Voltage and High Current Capability
Low On-Resistance for Efficient Power Conversion
Wide Operating Temperature Range
Compact TO-220F-3 Package
Key Technical Parameters
Drain-to-Source Voltage: 600V
Gate-to-Source Voltage: ±20V
On-Resistance: 380mΩ @ 5A, 10V
Continuous Drain Current: 10.2A @ 25°C
Power Dissipation: 31W @ Tc
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 Compliant
TO-220F-3 Through-Hole Package
Compatibility
Compatible with various power conversion and control applications
Application Areas
Power supplies
Motor drives
Lighting
Industrial automation
Household appliances
Product Lifecycle
Current product, no information on discontinuation or replacements
Key Reasons to Choose
High voltage and current capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Compact and reliable TO-220F-3 package
Suitable for a variety of power conversion and control applications
