Manufacturer Part Number
FCPF360N65S3R0L
Manufacturer
onsemi
Introduction
High-voltage MOSFET transistor designed for power conversion and control applications
Product Features and Performance
N-channel MOSFET with a maximum drain-to-source voltage of 650V
Low on-resistance of 360mΩ at 5A and 10V gate drive
Robust operating temperature range of -55°C to 150°C
High input capacitance of 730pF at 400V drain-to-source voltage
Maximum power dissipation of 27W at case temperature
Product Advantages
Efficient power conversion with low conduction losses
Reliable operation in high-temperature environments
Compact through-hole package design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 360mΩ @ 5A, 10V
Continuous Drain Current (Id): 10A at 25°C
Input Capacitance (Ciss): 730pF @ 400V
Power Dissipation (Pd): 27W at case temperature
Quality and Safety Features
ROHS3 compliant
Designed for reliable and safe operation
Compatibility
Compatible with standard TO-220-3 footprint
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial controls
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Efficient power conversion with low conduction losses
Reliable operation in high-temperature environments
Compact through-hole package design
Robust technical parameters for demanding applications
Proven quality and safety features
