Manufacturer Part Number
FCH190N65F-F155
Manufacturer
onsemi
Introduction
The FCH190N65F-F155 is a high-performance N-Channel MOSFET transistor from onsemi, suitable for various power electronics applications.
Product Features and Performance
650V Drain-to-Source Voltage (Vdss)
190mΩ Maximum On-Resistance (Rds(on)) at 10A, 10V
6A Continuous Drain Current (Id) at 25°C
208W Maximum Power Dissipation (Tc)
Wide Operating Temperature Range: -55°C to 150°C
Fast Switching Characteristics
Product Advantages
High Voltage Capability
Low On-Resistance for Improved Efficiency
High Current Handling Ability
Efficient Heat Dissipation
Suitable for High-Power Applications
Key Technical Parameters
Vdss: 650V
Vgs(th): 5V @ 2mA
Rds(on): 190mΩ @ 10A, 10V
Id: 20.6A @ 25°C
Ciss: 3225pF @ 100V
Qg: 78nC @ 10V
Quality and Safety Features
RoHS3 Compliant
TO-247-3 Package for Optimal Thermal Performance
Compatibility
Suitable for Various Power Electronics Applications
Compatible with Standard MOSFET Drivers and Control Circuits
Application Areas
Switching Mode Power Supplies (SMPS)
Motor Drives
Inverters
Uninterruptible Power Supplies (UPS)
Industrial and Automotive Electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options may be available from onsemi or other MOSFET manufacturers.
Several Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for improved efficiency
Efficient heat dissipation in the TO-247-3 package
Suitable for a wide range of high-power applications
Reliable and RoHS3 compliant design
Availability of replacement or upgrade options