Manufacturer Part Number
FCH165N65S3R0-F155
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET specifically designed for high-voltage, high-power density, and high-efficiency switching applications.
Product Features and Performance
Excellent RDS(on) performance for high-efficiency power conversion
Optimized gate charge and switching performance
Superior ruggedness and reliability
High-voltage capability up to 650V
Low gate charge and gate-to-source voltage
Product Advantages
Improved energy efficiency in power conversion applications
Reduced power losses and heat generation
Reliable and robust design for demanding applications
Key Technical Parameters
Drain to Source Voltage (VDS): 650V
Gate to Source Voltage (VGS): ±30V
On-State Resistance (RDS(on)): 165mΩ @ 9.5A, 10V
Continuous Drain Current (ID): 19A @ 25°C (Tc)
Input Capacitance (Ciss): 1500pF @ 400V
Power Dissipation (PD): 154W (Tc)
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
TO-247-3 package, suitable for various power electronics applications
Application Areas
High-voltage, high-power density, and high-efficiency switching applications
Power supplies, motor drives, solar inverters, and other power conversion systems
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent RDS(on) performance for high-efficiency power conversion
Optimized gate charge and switching performance for improved energy efficiency
Superior ruggedness and reliability for demanding applications
High-voltage capability up to 650V for a wide range of power electronics applications
Compatibility with TO-247-3 package for easy integration into existing designs
