Manufacturer Part Number
FCB260N65S3
Manufacturer
onsemi
Introduction
The FCB260N65S3 is a discrete semiconductor product, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
650V Drain-to-Source Voltage (Vdss)
260mΩ maximum On-Resistance (Rds(on)) at 6A, 10V
12A continuous drain current (Id) at 25°C
1010pF maximum Input Capacitance (Ciss) at 400V
90W maximum Power Dissipation at Tc
-55°C to 150°C Operating Temperature Range
Product Advantages
High voltage and current handling capabilities
Low on-resistance for improved efficiency
Compact DPAK (TO-263) surface mount package
Key Technical Parameters
FET Type: N-Channel MOSFET
Vgs(th) Max: 4.5V @ 1.2mA
Gate Charge (Qg) Max: 24nC @ 10V
Drive Voltage Range: 10V
Quality and Safety Features
RoHS3 Compliant
Suitable for high-reliability applications
Compatibility
Compatible with standard DPAK (TO-263) mounting
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently available
No indication of near discontinuation
Replacements and upgrades may be available
Key Reasons to Choose This Product
High voltage and current handling
Low on-resistance for efficiency
Compact DPAK package for space-constrained designs
Suitable for high-reliability applications
Broad compatibility and application areas