Manufacturer Part Number
FCA20N60F
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
Drain-to-Source Voltage: 600V
Gate-to-Source Voltage: ±30V
On-State Resistance: 190mΩ @ 10A, 10V
Continuous Drain Current: 20A @ 25°C
Input Capacitance: 3080pF @ 25V
Power Dissipation: 208W @ Tc
Gate Charge: 98nC @ 10V
Product Advantages
High voltage and power handling capability
Low on-state resistance for efficiency
Reliable performance over wide temperature range
Key Technical Parameters
MOSFET Technology
TO-3P-3 Package
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 Compliant
Reliable and robust design
Compatibility
Compatible with through-hole mounting
Application Areas
Power electronics
Motor controls
Inverters
Welding equipment
Industrial and consumer appliances
Product Lifecycle
This product is currently in production
Replacements or upgrades may be available
Several Key Reasons to Choose This Product
Proven reliability and performance
Ability to handle high voltages and currents
Efficient design with low on-state resistance
Wide operating temperature range
Compatibility with through-hole mounting