Manufacturer Part Number
FCA20N60
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
Operating temperature range of -55°C to 150°C
Drain-to-Source voltage of 600V
Maximum Gate-to-Source voltage of ±30V
On-state resistance (Rds(on)) of 190mOhm at 10A, 10V
Continuous Drain Current of 20A at 25°C
Input Capacitance (Ciss) of 3080pF at 25V
Maximum Power Dissipation of 208W at 25°C
Product Advantages
High-voltage and high-current capabilities
Low on-state resistance for efficient power switching
Wide operating temperature range
Compliant with RoHS3 environmental regulations
Key Technical Parameters
MOSFET technology
N-Channel FET type
Threshold voltage (Vgs(th)) of 5V at 250A
Gate Charge (Qg) of 98nC at 10V
Quality and Safety Features
RoHS3 compliant
TO-3P-3 package for through-hole mounting
Compatibility
Suitable for various power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Excellent high-voltage and high-current performance
Low on-state resistance for efficient power switching
Wide operating temperature range for versatile applications
Compliance with RoHS3 environmental regulations for use in various industries