Manufacturer Part Number
EMX1DXV6T5G
Manufacturer
onsemi
Introduction
Dual NPN bipolar junction transistor (BJT) array
Designed for general-purpose amplification and switching applications
Product Features and Performance
Operates in a temperature range of -55°C to 150°C
Provides a maximum power dissipation of 500mW
Offers a collector-emitter breakdown voltage (VCEO) of up to 50V
Supports a maximum collector current (IC) of 100mA
Exhibits a maximum collector cut-off current (ICBO) of 500nA
Provides a maximum collector-emitter saturation voltage (VCE(sat)) of 400mV @ 5mA, 50mA
Achieves a minimum DC current gain (hFE) of 120 @ 1mA, 6V
Operates at a transition frequency (fT) of 180MHz
Product Advantages
Dual transistor design for increased integration and space savings
Suitable for a wide range of general-purpose amplification and switching applications
Robust performance over a wide temperature range
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 50V
Collector Current (IC): 100mA
Collector Cut-off Current (ICBO): 500nA
Collector-Emitter Saturation Voltage (VCE(sat)): 400mV
DC Current Gain (hFE): 120 min
Transition Frequency (fT): 180MHz
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount package (SOT-563, SOT-666)
Suitable for tape and reel (TR) packaging
Application Areas
General-purpose amplification and switching applications
Consumer electronics
Industrial control systems
Power management circuits
Product Lifecycle
Current production part
Replacement or upgrade options available
Key Reasons to Choose This Product
Dual transistor design for increased integration and space savings
Robust performance over a wide temperature range
Suitable for a variety of general-purpose amplification and switching applications
RoHS3 compliance for use in high-reliability applications
Surface mount packaging and tape and reel availability for efficient manufacturing
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