EMX1DXV6T5G - onsemi

Manufacturer Part Number

EMX1DXV6T5G

Manufacturer

onsemi

Introduction

Dual NPN bipolar junction transistor (BJT) array

Designed for general-purpose amplification and switching applications

Product Features and Performance

Operates in a temperature range of -55°C to 150°C

Provides a maximum power dissipation of 500mW

Offers a collector-emitter breakdown voltage (VCEO) of up to 50V

Supports a maximum collector current (IC) of 100mA

Exhibits a maximum collector cut-off current (ICBO) of 500nA

Provides a maximum collector-emitter saturation voltage (VCE(sat)) of 400mV @ 5mA, 50mA

Achieves a minimum DC current gain (hFE) of 120 @ 1mA, 6V

Operates at a transition frequency (fT) of 180MHz

Product Advantages

Dual transistor design for increased integration and space savings

Suitable for a wide range of general-purpose amplification and switching applications

Robust performance over a wide temperature range

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 50V

Collector Current (IC): 100mA

Collector Cut-off Current (ICBO): 500nA

Collector-Emitter Saturation Voltage (VCE(sat)): 400mV

DC Current Gain (hFE): 120 min

Transition Frequency (fT): 180MHz

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Surface mount package (SOT-563, SOT-666)

Suitable for tape and reel (TR) packaging

Application Areas

General-purpose amplification and switching applications

Consumer electronics

Industrial control systems

Power management circuits

Product Lifecycle

Current production part

Replacement or upgrade options available

Key Reasons to Choose This Product

Dual transistor design for increased integration and space savings

Robust performance over a wide temperature range

Suitable for a variety of general-purpose amplification and switching applications

RoHS3 compliance for use in high-reliability applications

Surface mount packaging and tape and reel availability for efficient manufacturing