Manufacturer Part Number
EMX1DXV6T1G
Manufacturer
onsemi
Introduction
A dual NPN bipolar transistor array with high-performance characteristics in a small, surface-mount package.
Product Features and Performance
Dual NPN bipolar transistors
High transition frequency of 180MHz
Low collector-emitter saturation voltage (Vce(sat)) of 400mV @ 5mA, 50mA
Collector current (Ic) up to 100mA
Collector-emitter breakdown voltage (BVCE0) of 50V
Operating temperature range of -55°C to 150°C
Product Advantages
Compact surface-mount package
Excellent high-frequency performance
Low power consumption
Wide operating temperature range
Key Technical Parameters
Package: SOT-563, SOT-666
Power: 500mW
Collector-Emitter Breakdown Voltage (BVCE0): 50V
Collector Current (Ic): 100mA
Collector Cutoff Current (ICBO): 500nA
DC Current Gain (hFE): 120 @ 1mA, 6V
Transition Frequency (FT): 180MHz
Quality and Safety Features
RoHS3 compliant
Manufactured in an ISO-certified facility
Compatibility
This product is compatible with a wide range of electronic circuits and applications that require high-performance dual NPN bipolar transistors.
Application Areas
Switching circuits
Amplifier circuits
Logic gates
Interfacing circuits
General-purpose analog and digital applications
Product Lifecycle
The EMX1DXV6T1G is a currently available product from onsemi. There are no indications of it being near discontinuation, and replacement or upgrade options may be available.
Several Key Reasons to Choose This Product
Excellent high-frequency performance with a transition frequency of 180MHz
Low collector-emitter saturation voltage for efficient operation
Wide operating temperature range of -55°C to 150°C
Compact surface-mount package for space-constrained designs
RoHS3 compliance for environmentally-friendly applications
Manufactured in an ISO-certified facility for quality assurance
EMX18.EMT6