Manufacturer Part Number
ECH8668-TL-H
Manufacturer
onsemi
Introduction
High-performance N-channel and P-channel MOSFET array in a space-saving 8-SOIC package.
Product Features and Performance
N and P-channel configuration
Low on-resistance (Rds(on)) for efficient power switching
High current capability up to 7.5A continuous drain current
Logic-level gate drive (Vgs = 4.5V)
Low gate charge (Qg) for fast switching
Low input capacitance (Ciss) for efficient operation
Rated for 150°C junction temperature
Product Advantages
Compact 8-SOIC package for space-constrained designs
Efficient power switching performance
Suitable for a variety of power management applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
RDS(on) (max): 17mΩ @ 4A, 4.5V
Continuous Drain Current (ID): 7.5A @ 25°C
Input Capacitance (Ciss): 1060pF @ 10V
Gate Charge (Qg): 10.8nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Backed by onsemi's quality and reliability standards
Compatibility
Suitable for a variety of power management applications, such as:
- DC-DC converters
- Motor drives
- Power supplies
- Switching regulators
Application Areas
Consumer electronics
Industrial equipment
Automotive electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacements and upgrades may be available from onsemi.
Key Reasons to Choose This Product
Efficient power switching performance with low RDS(on) and high current capability
Compact 8-SOIC package for space-constrained designs
Logic-level gate drive for easy interfacing
Backed by onsemi's quality and reliability standards
Suitable for a wide range of power management applications