Manufacturer Part Number
ECH8663R-TL-H
Manufacturer
onsemi
Introduction
Discrete semiconductor product
N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) array
Product Features and Performance
Dual N-channel MOSFET configuration
30V drain-to-source voltage rating
5mΩ maximum on-resistance at 4A, 4.5V
8A continuous drain current at 25°C
Logic-level gate
3nC maximum gate charge at 4.5V
Product Advantages
Compact 8-pin SMD package
RoHS3 compliant
Tape-and-reel packaging for automated assembly
Key Technical Parameters
Operating temperature up to 150°C
Maximum power dissipation of 1.5W
Quality and Safety Features
Robust MOSFET design for reliable operation
Complies with RoHS3 environmental directives
Compatibility
Suitable for a wide range of applications that require dual N-channel MOSFET devices
Application Areas
Power management circuits
Motor control
Switching applications
General-purpose power electronics
Product Lifecycle
Currently in production
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High performance and efficiency in a compact package
Reliable operation at high temperatures
Ease of integration into automated manufacturing processes
Compliance with environmental regulations
ECH8655RR-TLAMI Semiconductor/onsemi