DTC114TET1G - onsemi

Manufacturer Part Number

DTC114TET1G

Manufacturer

onsemi

Introduction

Discrete semiconductor device

Bipolar junction transistor (BJT)

Pre-biased NPN transistor

Product Features and Performance

Low power consumption (200 mW max)

High voltage rating (50 V max collector-emitter breakdown voltage)

High current capability (100 mA max collector current)

Low collector cutoff current (500 nA max)

Low collector-emitter saturation voltage (250 mV max @ 1 mA, 10 mA)

High DC current gain (160 min @ 5 mA, 10 V)

Integrated 10 kOhm base resistor

Product Advantages

Compact surface mount package (SC-75, SOT-416)

Excellent electrical characteristics for a wide range of applications

Pre-biased design simplifies circuit design

Key Technical Parameters

Power rating: 200 mW

Collector-emitter breakdown voltage: 50 V

Collector current: 100 mA

Collector cutoff current: 500 nA

Collector-emitter saturation voltage: 250 mV @ 1 mA, 10 mA

DC current gain: 160 min @ 5 mA, 10 V

Base resistor: 10 kOhms

Quality and Safety Features

RoHS3 compliant

Reliable performance and long-term stability

Compatibility

Surface mount package (SC-75, SOT-416)

Suitable for a wide range of electronic circuits and applications

Application Areas

General-purpose amplifier and switching applications

Consumer electronics

Industrial control systems

Automotive electronics

Product Lifecycle

Currently in production

Replacement and upgrade options available if needed

Key Reasons to Choose This Product

Excellent electrical characteristics in a compact package

Pre-biased design simplifies circuit design

RoHS3 compliance for environmentally friendly applications

Reliable performance and long-term stability

Compatibility with a wide range of electronic circuits and applications