DTC114TET1 - onsemi

Manufacturer Part Number

DTC114TET1

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Transistor Bipolar (BJT) Single, Pre-Biased

Product Features and Performance

Power Rating: 200 mW

Collector-Emitter Breakdown Voltage (Max): 50 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 500 nA

Collector-Emitter Saturation Voltage (Max): 250 mV @ 1 mA, 10 mA

DC Current Gain (hFE) (Min): 160 @ 5 mA, 10 V

Built-in Base Resistor: 10 kOhms

Product Advantages

Pre-biased transistor design for simplified biasing

Compact surface mount package

Key Technical Parameters

Transistor Type: NPN Pre-Biased

Packaging: SC-75, SOT-416, Tape & Reel (TR)

RoHS: Non-compliant

Quality and Safety Features

Robust surface mount package

Compatibility

Compatible with various electronic circuits and applications

Application Areas

Suitable for use in a wide range of electronic devices and circuits

Product Lifecycle

Current product, no discontinuation information available

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Pre-biased design for simplified circuit design

Compact surface mount package for efficient space utilization

Reliable performance characteristics