Manufacturer Part Number
D45VH10G
Manufacturer
onsemi
Introduction
High power PNP bipolar junction transistor (BJT)
Designed for high-power audio amplifier and power converter applications
Product Features and Performance
High power handling capability up to 83W
High current rating up to 15A
Wide collector-emitter breakdown voltage up to 80V
High current gain up to 50MHz transition frequency
Product Advantages
Excellent thermal performance
Reliable operation in high-power and high-current applications
Robust design for demanding environments
Key Technical Parameters
Operating temperature range: -55°C to 150°C
Collector-emitter breakdown voltage (max): 80V
Collector current (max): 15A
Collector-emitter saturation voltage: 1V @ 800mA, 8A
DC current gain (min): 20 @ 4A, 1V
Transition frequency: 50MHz
Quality and Safety Features
RoHS3 compliant
Reliable performance in harsh environments
Compatibility
Through-hole mounting in TO-220 package
Application Areas
High-power audio amplifiers
Power converters
Industrial and automotive electronics
Product Lifecycle
Active product, no plans for discontinuation
Replacements and upgrades available from onsemi
Key Reasons to Choose This Product
Exceptional power handling and current capabilities
Wide operating voltage range
High-frequency performance for advanced circuit designs
Robust and reliable design for demanding applications
Compatibility with standard TO-220 package