Manufacturer Part Number
D45H11FP
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
TO-220FP Package
Operating Temperature: 150°C (TJ)
Power Rating: 36 W
Collector-Emitter Breakdown Voltage: 80 V
Collector Current (Max): 10 A
Collector Cutoff Current (Max): 10 A
Collector-Emitter Saturation Voltage: 1 V @ 400 mA, 8 A
DC Current Gain (hFE): 40 @ 4 A, 1 V
Product Advantages
High power handling capability
High voltage rating
High current rating
Low saturation voltage
Key Technical Parameters
Transistor Type: PNP
Mounting Type: Through Hole
Quality and Safety Features
RoHS3 Compliant
Compatibility
TO-220-3 Full Pack package
Application Areas
High-power switching and amplifier circuits
Power supplies
Motor controls
Industrial electronics
Product Lifecycle
Currently available
No known discontinuation plans
Key Reasons to Choose This Product
Robust performance in high-power applications
Compact and reliable TO-220FP package
Wide operating temperature range
Excellent electrical characteristics for efficient power management
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