CPH3140-TL-E - onsemi

Manufacturer Part Number

CPH3140-TL-E

Manufacturer

onsemi

Introduction

The CPH3140-TL-E is a PNP bipolar junction transistor (BJT) designed for general-purpose applications.

Product Features and Performance

Operates at high temperatures up to 150°C

High power rating of 900 mW

High collector-emitter breakdown voltage of 100 V

High collector current rating of 1 A

Low collector-emitter saturation voltage of 600 mV @ 40 mA, 400 mA

High DC current gain of 140 @ 100 mA, 5 V

High transition frequency of 120 MHz

Product Advantages

Reliable high-performance operation

Compact surface mount package

Suitable for a wide range of applications

Key Technical Parameters

Operating temperature range: -55°C to 150°C

Maximum power dissipation: 900 mW

Collector-emitter breakdown voltage: 100 V

Collector current: 1 A

Collector-emitter saturation voltage: 600 mV @ 40 mA, 400 mA

DC current gain: 140 @ 100 mA, 5 V

Transition frequency: 120 MHz

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for automated assembly

Compatibility

The CPH3140-TL-E is a general-purpose PNP bipolar transistor suitable for a wide range of applications.

Application Areas

Amplifiers

Switches

Drivers

Power supplies

General-purpose electronics

Product Lifecycle

The CPH3140-TL-E is an active and widely available product. Replacements or upgrades may be available in the future.

Key Reasons to Choose This Product

Reliable high-performance operation

Wide operating temperature range

High power and voltage ratings

Compact surface mount package

RoHS3 compliance for environmental safety

Suitable for a variety of applications