Manufacturer Part Number
CPH3116-TL-E
Manufacturer
onsemi
Introduction
High-frequency, high-power PNP bipolar junction transistor (BJT) for general-purpose amplifier and switching applications.
Product Features and Performance
High-frequency operation up to 420 MHz
High power handling capability up to 900 mW
High collector-emitter breakdown voltage of 50 V
High collector current capability up to 1 A
Low collector-emitter saturation voltage of 430 mV @ 10 mA, 500 mA
High current gain of 200 @ 100 mA, 2 V
Product Advantages
Suitable for high-frequency, high-power amplifier and switching applications
Robust design for reliable performance
Small surface mount package for compact designs
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 50 V
Collector Current (IC): 1 A
Collector-Emitter Saturation Voltage (VCE(sat)): 430 mV @ 10 mA, 500 mA
DC Current Gain (hFE): 200 @ 100 mA, 2 V
Transition Frequency (fT): 420 MHz
Power Dissipation: 900 mW
Operating Temperature Range: -55°C to +150°C
Quality and Safety Features
RoHS3 compliant
Reliable performance in harsh environments
Compatibility
Surface mount package (TO-236-3, SC-59, SOT-23-3) for easy integration into a wide range of electronic devices.
Application Areas
General-purpose amplifier and switching applications
Audio amplifiers
Power supplies
Industrial electronics
Telecommunications equipment
Product Lifecycle
Current production, no plans for discontinuation
Readily available replacements or upgrades from onsemi
Key Reasons to Choose This Product
High-frequency, high-power performance for demanding applications
Robust design for reliable operation
Small surface mount package for compact designs
RoHS3 compliance for environmental friendliness
Wide operating temperature range for versatile use
Readily available from a trusted manufacturer, onsemi
