BSS138LT3G - onsemi

Manufacturer Part Number

BSS138LT3G

Manufacturer

onsemi

Introduction

N-channel enhancement-mode MOSFET transistor

Designed for general-purpose switching and amplification applications

Product Features and Performance

Drain-source voltage (Vdss) up to 50V

Wide operating temperature range of -55°C to 150°C

Low on-resistance (Rds(on)) of 3.5Ω @ 200mA, 5V

Input capacitance (Ciss) of 50pF @ 25V

Maximum power dissipation of 225mW

Product Advantages

Excellent switching characteristics

Reliable and robust performance

Suitable for a wide range of applications

Key Technical Parameters

Drain-source voltage (Vdss): 50V

Gate-source voltage (Vgs): ±20V

Continuous drain current (Id): 200mA

Threshold voltage (Vgs(th)): 1.5V @ 1mA

Quality and Safety Features

RoHS3 compliant

Qualified to stringent quality standards

Compatibility

Industry-standard SOT-23-3 (TO-236) package

Compatible with a wide range of electronic circuits and systems

Application Areas

General-purpose switching and amplification

Low-power analog and digital circuits

Power management and control applications

Product Lifecycle

Currently in production

Mature and well-established product

Readily available replacements or upgrades

Key Reasons to Choose this Product

Robust and reliable performance

Excellent switching characteristics

Wide operating temperature range

Low on-resistance for efficient power management

Compact and industry-standard package