BSS138LT1G - onsemi

Manufacturer Part Number

BSS138LT1G

Manufacturer

onsemi

Introduction

The BSS138LT1G is a N-channel enhancement-mode field-effect transistor (FET) designed for general-purpose switching and amplifier applications.

Product Features and Performance

N-Channel enhancement-mode MOSFET

Low on-resistance of 3.5Ω @ 200mA, 5V

Low input capacitance of 50pF @ 25V

Wide operating temperature range of -55°C to 150°C

Maximum drain-source voltage of 50V

Maximum gate-source voltage of ±20V

Maximum continuous drain current of 200mA

Product Advantages

Excellent switching performance

Low power dissipation of 225mW

Surface mount package for compact design

Reliable and robust construction

Key Technical Parameters

Drain to Source Voltage (Vdss): 50V

Gate to Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 3.5Ω @ 200mA, 5V

Drain Current (Id): 200mA

Input Capacitance (Ciss): 50pF @ 25V

Power Dissipation (Pd): 225mW

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified

Compatibility

Surface mount SOT-23-3 (TO-236) package

Suitable for general-purpose switching and amplifier applications

Application Areas

General-purpose switching circuits

Amplifier circuits

Power management applications

Logic-level conversion

LED drivers

Product Lifecycle

This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options are available from the manufacturer.

Key Reasons to Choose This Product

Excellent switching performance with low on-resistance

Low power dissipation for efficient operation

Compact surface mount package for space-constrained designs

Wide operating temperature range for reliable operation

RoHS3 compliant and AEC-Q101 qualified for quality and safety