Manufacturer Part Number
BCW65CLT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), NPN type
Product Features and Performance
Optimized for general-purpose amplifier and switching applications
High collector-emitter breakdown voltage of up to 32V
High collector current capability of up to 800mA
High transition frequency of 100MHz
Low collector-emitter saturation voltage of 700mV @ 50mA, 500mA
Product Advantages
Compact SMD package (SOT-23-3)
Wide operating temperature range (-55°C to 150°C)
RoHS3 compliant
Key Technical Parameters
Power Rating: 225mW
Collector-Emitter Breakdown Voltage (Max): 32V
Collector Current (Max): 800mA
Collector Cutoff Current (Max): 20nA
DC Current Gain (hFE): Min. 250 @ 100mA, 1V
Quality and Safety Features
RoHS3 compliant
Compatibility
Compatible with various electronic circuit designs requiring high-performance NPN bipolar transistors
Application Areas
General-purpose amplifier circuits
Switching applications
Electronic circuits in industrial, consumer, and automotive domains
Product Lifecycle
Current product, no plans for discontinuation
Key Reasons to Choose This Product
High voltage and current handling capability
Fast switching performance with high transition frequency
Compact SMD package for space-constrained designs
Wide operating temperature range
RoHS3 compliance for environmentally friendly applications