BCW65ALT1G - onsemi

Manufacturer Part Number

BCW65ALT1G

Manufacturer

onsemi

Introduction

High-performance NPN bipolar junction transistor (BJT) for use in a variety of switching and amplifier applications.

Product Features and Performance

Excellent current handling capability up to 800 mA

High operating voltage up to 32 V

Wide operating temperature range from -55°C to 150°C

High transition frequency of 100 MHz

Low collector-emitter saturation voltage of 700 mV at 50 mA, 500 mA

High DC current gain of 100 at 100 mA, 1 V

Product Advantages

Reliable and robust design

Efficient power handling

Suitable for high-frequency applications

Versatile in various circuit designs

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 32 V

Collector Current: 800 mA

Collector Cutoff Current: 20 nA

DC Current Gain: 100 min. at 100 mA, 1 V

Transition Frequency: 100 MHz

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Reliable performance in a wide temperature range

Compatibility

Compatible with various electronic circuits and systems

Application Areas

Switching circuits

Amplifier circuits

Power management

Industrial controls

Consumer electronics

Product Lifecycle

This product is currently in active production and available. There are no plans for discontinuation, and replacements or upgrades may be available in the future.

Key Reasons to Choose This Product

Excellent current handling and voltage capability

High-frequency performance for advanced applications

Robust and reliable design for harsh environments

Versatile in a wide range of electronic circuit designs

RoHS3 compliance for environmentally friendly use