Manufacturer Part Number
BC858ALT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
SOT-23-3 (TO-236) Package
Operating Temperature: -55°C to 150°C
Power Rating: 300 mW
Collector-Emitter Breakdown Voltage: 30 V
Collector Current (Max): 100 mA
Collector Cut-off Current (Max): 15 nA
Collector-Emitter Saturation Voltage: 650 mV @ 5 mA, 100 mA
DC Current Gain (hFE): 125 @ 2 mA, 5 V
Transition Frequency: 100 MHz
Product Advantages
Small, surface-mount package
Wide operating temperature range
High power and voltage ratings
High current gain and transition frequency
Key Technical Parameters
Transistor Type: PNP
Package: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with a variety of electronic circuits and applications
Application Areas
Suitable for use in a wide range of electronic devices and circuits, including amplifiers, switches, and logic gates
Product Lifecycle
Currently available, no indication of discontinuation
Replacements and upgrades may be available from the manufacturer or other sources
Key Reasons to Choose This Product
Compact, surface-mount package for efficient board layout
Wide operating temperature range for versatile applications
High power and voltage ratings for high-performance circuits
High current gain and transition frequency for improved circuit performance
RoHS3 compliance for environmentally-friendly use