Manufacturer Part Number
BC858ALT1
Manufacturer
onsemi
Introduction
Single Bipolar Junction Transistor (BJT)
PNP type
Product Features and Performance
Operating temperature range: -55°C to 150°C
Power rating: 300 mW
Collector-Emitter Breakdown Voltage: 30 V (max)
Collector Current: 100 mA (max)
Collector Cutoff Current: 15 nA (max)
VCE Saturation Voltage: 650 mV @ 5 mA, 100 mA
DC Current Gain (hFE): 125 (min) @ 2 mA, 5 V
Transition Frequency: 100 MHz
Product Advantages
Compact surface mount package (SOT-23-3)
Wide operating temperature range
Suitable for a variety of electronic circuit applications
Key Technical Parameters
Transistor Type: PNP Bipolar Junction Transistor
Package: SOT-23-3 (TO-236)
Packaging: Tape and Reel
Quality and Safety Features
RoHS non-compliant
Compatibility
Suitable for use in a wide range of electronic circuits and applications
Application Areas
Analog and digital circuits
Amplifiers
Switches
Biasing networks
Voltage regulation
General-purpose electronics
Product Lifecycle
This product is an active component and is not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer or other sources.
Key Reasons to Choose This Product
Wide operating temperature range (-55°C to 150°C)
High power rating (300 mW)
High collector-emitter breakdown voltage (30 V)
Compact surface mount package (SOT-23-3)
Suitable for a variety of electronic circuit applications