BC847CLT1G - onsemi

Manufacturer Part Number

BC847CLT1G

Manufacturer

onsemi

Introduction

The BC847CLT1G is a silicon NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications.

Product Features and Performance

Operating temperature range of -55°C to 150°C

Power handling capability of up to 300 mW

Collector-emitter breakdown voltage of up to 45 V

Collector current of up to 100 mA

Collector cutoff current of up to 15 nA

Vce saturation voltage of up to 600 mV at 5 mA, 100 mA

DC current gain (hFE) of at least 420 at 2 mA, 5 V

Transition frequency of 100 MHz

Product Advantages

Reliable and robust performance

Suitable for a wide range of applications

Compact and space-saving surface mount package

Key Technical Parameters

Collector-emitter breakdown voltage: 45 V

Collector current: 100 mA

Collector cutoff current: 15 nA

Vce saturation voltage: 600 mV

DC current gain (hFE): 420 minimum

Transition frequency: 100 MHz

Quality and Safety Features

ROHS3 compliant

Suitable for reflow soldering

Compatibility

Compatible with various electronic circuits and systems

Application Areas

General-purpose amplification and switching applications

Suitable for use in a wide range of electronic devices and equipment

Product Lifecycle

Currently available product

Replacements or upgrades may be available in the future

Several Key Reasons to Choose This Product

Reliable and robust performance

Wide operating temperature range

Compact and space-saving surface mount package

Suitable for a variety of applications

Competitive pricing and availability