Manufacturer Part Number
BC847CDW1T1G
Manufacturer
onsemi
Introduction
High-performance dual NPN small signal transistors
Product Features and Performance
Bipolar junction transistor (BJT) array
Dual NPN transistors in a single package
Optimized for high-frequency analog and digital applications
Low noise and low collector-emitter saturation voltage
Wide operating temperature range of -55°C to 150°C
Product Advantages
Compact size and high integration for space-constrained designs
Improved efficiency and reliability compared to discrete transistors
Excellent electrical characteristics for high-frequency performance
Key Technical Parameters
Operating voltage: up to 45V
Collector current: up to 100mA
Collector-emitter breakdown voltage: up to 45V
DC current gain: minimum 420 at 2mA, 5V
Transition frequency: 100MHz
Quality and Safety Features
RoHS3 compliant
Qualified to AEC-Q101 standard for automotive applications
Compatibility
Surface mount package: SC-88/SC70-6/SOT-363
Tape and reel packaging
Application Areas
High-frequency analog and digital circuits
Switching and amplifier applications
Automotive electronics
Industrial control systems
Product Lifecycle
Current production part
Replacement parts and upgrades available
Key Reasons to Choose This Product
Excellent high-frequency performance with low noise and saturation voltage
Compact dual-transistor design for space-saving layouts
Robust design qualified for automotive and industrial applications
Wide operating temperature range for versatile use cases