BC847BDW1T3G - onsemi

Manufacturer Part Number

BC847BDW1T3G

Manufacturer

onsemi

Introduction

Dual NPN Transistor Array

Product Features and Performance

Compact surface mount package

Wide operating temperature range (-55°C to 150°C)

High power handling capability (380mW)

High breakdown voltage (45V)

High collector current (100mA)

Low collector-emitter saturation voltage (600mV)

High current gain (hFE ≥ 200)

High transition frequency (100MHz)

Product Advantages

Space-saving design

Wide temperature tolerance

Robust performance

Reliable operation

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 45V

Collector Current (IC): 100mA

Collector Cutoff Current (ICBO): 15nA

DC Current Gain (hFE): ≥ 200

Transition Frequency (fT): 100MHz

Power Dissipation: 380mW

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Compatible with various surface mount configurations (SC-88/SC70-6/SOT-363)

Application Areas

Analog and digital circuits

Switching and amplifier applications

Consumer electronics

Industrial control systems

Product Lifecycle

This product is an active and widely available part.

Replacements and upgrades may be available from onsemi or other manufacturers.

Key Reasons to Choose This Product

Compact size and space-saving design

Wide operating temperature range for versatile applications

High power handling and breakdown voltage for robust performance

Low saturation voltage and high current gain for efficient operation

High transition frequency for high-speed applications

RoHS3 compliance for environmentally conscious design