BC847BDW1T1G - onsemi

Manufacturer Part Number

BC847BDW1T1G

Manufacturer

onsemi

Introduction

Dual NPN bipolar junction transistor (BJT) array

Product Features and Performance

Optimized for low-power analog and digital circuits

High current gain (hFE) of at least 200 at 2mA, 5V

Transition frequency (fT) of 100MHz

Low collector-emitter saturation voltage (VCEsat) of 600mV at 5mA, 100mA

Low collector cutoff current (ICBO) of 15nA

Wide operating temperature range of -55°C to 150°C

Product Advantages

Compact and space-saving 6-pin SC-88/SOT-363 package

Excellent thermal and electrical performance

Robust and reliable construction

Compliant with RoHS3 environmental standards

Key Technical Parameters

Power rating: 380mW

Collector-emitter breakdown voltage (BVCE0): 45V

Collector current (IC): 100mA

Quality and Safety Features

Tested and certified to meet stringent quality and reliability standards

RoHS3 compliant for environmentally-friendly use

Compatibility

Compatible with a wide range of analog and digital electronic circuits

Application Areas

Ideal for use in low-power amplifiers, switches, and logic gates

Suitable for consumer electronics, industrial control, and telecommunications applications

Product Lifecycle

Currently in active production

Availability of direct replacement or upgraded models for long-term supply

Key Reasons to Choose This Product

Excellent electrical and thermal performance

Compact and space-saving packaging

Robust and reliable construction

Compliance with environmental regulations

Suitability for a wide range of applications