Manufacturer Part Number
BC32740TA
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
TO-92-3 Package
Max Power: 625 mW
Max Collector-Emitter Breakdown Voltage: 45 V
Max Collector Current: 800 mA
Max Collector Cutoff Current: 100 nA
Max Collector-Emitter Saturation Voltage: 700 mV @ 50 mA, 500 mA
Minimum DC Current Gain (hFE): 250 @ 100 mA, 1 V
Transition Frequency: 100 MHz
Product Advantages
Reliable performance
Compact and efficient design
Wide range of applications
Key Technical Parameters
Package: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic circuits and applications
Application Areas
Suitable for a wide range of electronic devices and circuits
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose
Reliable performance
Compact and efficient design
Wide range of applications
RoHS3 Compliant
Compatibility with various electronic circuits and applications
BC32840LUMILEDS