Manufacturer Part Number
BC32725TA
Manufacturer
onsemi
Introduction
The BC32725TA is a single bipolar junction transistor (BJT) in a TO-92-3 package.
Product Features and Performance
Power rating of 625 mW
Collector-emitter breakdown voltage of 45 V
Maximum collector current of 800 mA
Low collector-emitter saturation voltage of 700 mV @ 50 mA, 500 mA
Transistor frequency transition of 100 MHz
DC current gain (hFE) of 160 min. @ 100 mA, 1 V
Operating temperature up to 150°C
Product Advantages
High power and voltage ratings
Low saturation voltage for efficient switching
High-frequency performance
Compact TO-92-3 package
Key Technical Parameters
Power Max: 625 mW
Voltage Collector Emitter Breakdown (Max): 45 V
Current Collector (Ic) (Max): 800 mA
Vce Saturation (Max) @ Ib, Ic: 700 mV @ 50 mA, 500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100 mA, 1 V
Frequency Transition: 100 MHz
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature applications up to 150°C
Compatibility
Through-hole mounting
TO-92-3 package
Application Areas
General-purpose amplifier and switching applications
Power management circuits
Industrial and consumer electronics
Product Lifecycle
The BC32725TA is an active product with no plans for discontinuation.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
High power and voltage ratings for demanding applications
Low saturation voltage for efficient switching performance
High-frequency operation up to 100 MHz
Compact and versatile TO-92-3 package
RoHS3 compliance and high-temperature capability
Proven reliability and performance from onsemi