BBS3002-DL-1E - onsemi

Manufacturer Part Number

BBS3002-DL-1E

Manufacturer

onsemi

Introduction

High-performance P-channel power MOSFET in a compact DPAK package

Product Features and Performance

60V drain-to-source voltage

100A continuous drain current

8mOhm maximum on-resistance

13200pF maximum input capacitance

280nC maximum gate charge

90W maximum power dissipation

Product Advantages

Compact DPAK (TO-263) package

Low on-resistance for high efficiency

High current capability

Suitable for a wide range of power management applications

Key Technical Parameters

Drain-to-Source Voltage (VDS): 60V

Gate-to-Source Voltage (VGS): ±20V

On-Resistance (RDS(on)): 5.8mOhm @ 50A, 10V

Continuous Drain Current (ID): 100A @ 25°C

Input Capacitance (Ciss): 13200pF @ 20V

Power Dissipation (PD): 90W @ Tc

Quality and Safety Features

RoHS 3 compliant

Suitable for high-temperature operation up to 150°C

Compatibility

Surface mount, DPAK (TO-263) package

Suitable for a wide range of power management applications

Application Areas

Switch-mode power supplies

Motor drives

Industrial and automotive power electronics

Product Lifecycle

Currently available

No known plans for discontinuation

Key Reasons to Choose This Product

High current and low on-resistance for efficient power conversion

Compact DPAK package for space-constrained designs

Suitable for a wide range of power management applications

Reliable operation up to 150°C junction temperature

RoHS 3 compliant for use in environmentally-conscious applications