30A02CH-TL-E - onsemi

Manufacturer Part Number

30A02CH-TL-E

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

Power Rating: 700 mW

Collector-Emitter Breakdown Voltage: 30 V

Collector Current (Max): 700 mA

Collector Cut-off Current (Max): 100 nA

Collector-Emitter Saturation Voltage: 220 mV @ 10 mA, 200 mA

DC Current Gain (hFE): 200 minimum @ 10 mA, 2 V

Transition Frequency: 520 MHz

Product Advantages

Compact surface mount package

High power and current handling capability

Low saturation voltage

High current gain

High transition frequency

Key Technical Parameters

Transistor Type: PNP

Package: SC-96 (3-CPH)

Mounting Type: Surface Mount

RoHS Compliance: RoHS3 Compliant

Quality and Safety Features

Reliable performance within the specified operating temperature range of -55°C to 150°C

Compatibility

Suitable for a wide range of electronic circuit designs and applications

Application Areas

Amplifiers

Switches

Drivers

Power supplies

Telecommunication equipment

Industrial control systems

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgraded parts may be available in the future, depending on market demand and product roadmaps.

Key Reasons to Choose This Product

High power and current handling capabilities

Low saturation voltage for efficient operation

High current gain and transition frequency for improved performance

Compact surface mount package for space-constrained designs

Reliable operation within the specified temperature range

Compatibility with a wide range of electronic applications