Manufacturer Part Number
2SD1628G-TD-H
Manufacturer
onsemi
Introduction
This is a high-performance NPN bipolar junction transistor (BJT) from onsemi, designed for a variety of power amplifier and switching applications.
Product Features and Performance
500 mW maximum power dissipation
20 V maximum collector-emitter breakdown voltage
5 A maximum collector current
100 nA maximum collector cutoff current
500 mV maximum collector-emitter saturation voltage @ 60 mA, 3 A
120 MHz transition frequency
120 minimum DC current gain @ 500 mA, 2 V
Product Advantages
Excellent switching and amplification capabilities
Compact surface mount package
RoHS-3 compliant
Key Technical Parameters
Package: TO-243AA
Operating temperature: 150°C (TJ)
Transistor type: NPN
Quality and Safety Features
RoHS-3 compliant
Reliable performance and long lifespan
Compatibility
This transistor is widely compatible and can be used in a variety of power amplifier and switching applications.
Application Areas
Power amplifiers
Switching circuits
Power supplies
Motor controls
Industrial electronics
Product Lifecycle
The 2SD1628G-TD-H is an active and widely available product. Replacement or upgrade options may be available from onsemi or other manufacturers.
Key Reasons to Choose This Product
High-performance NPN bipolar transistor with excellent switching and amplification capabilities
Compact surface mount package for space-constrained designs
RoHS-3 compliance for environmental friendliness
Reliable and long-lasting performance
Wide compatibility and suitability for various power amplifier and switching applications