Manufacturer Part Number
2SD1628G-TD-E
Manufacturer
onsemi
Introduction
High-performance NPN bipolar junction transistor
Product Features and Performance
High current handling capability up to 5A
High frequency operation up to 120MHz
Low collector-emitter saturation voltage
High DC current gain of 120 or more
Product Advantages
Suitable for high-speed switching and amplifier applications
Robust surface mount design
RoHS compliance for environmental friendliness
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 20V
Collector Current (IC): 5A
Power Dissipation: 500mW
Junction Temperature (TJ): 150°C
Quality and Safety Features
RoHS3 compliant for restricted substance control
Reliable performance in various operating conditions
Compatibility
Suitable for a wide range of electronic circuits and applications
Application Areas
High-speed switching circuits
Amplifier circuits
Power management systems
Industrial and consumer electronics
Product Lifecycle
Active and available product
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High current capability and frequency performance
Low saturation voltage for efficient operation
Robust surface mount package design
RoHS compliance for environmental responsibility
Proven reliability and suitability for various applications
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