2SC6097-TL-E - onsemi

Manufacturer Part Number

2SC6097-TL-E

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

RoHS3 Compliant

TO-252-3, DPak (2 Leads + Tab), SC-63 Package

Operating Temperature: 150°C (TJ)

Power Rating: 800 mW

Collector-Emitter Breakdown Voltage (Max): 60 V

Collector Current (Max): 3 A

Collector Cutoff Current (Max): 1A (ICBO)

Collector-Emitter Saturation Voltage (Max): 135mV @ 100mA, 1A

NPN Transistor Type

DC Current Gain (hFE) (Min): 300 @ 100mA, 2V

Transition Frequency: 390MHz

Surface Mount Mounting

Product Advantages

Compact and efficient package

High power handling capability

High current and voltage ratings

Fast switching performance

Key Technical Parameters

Power Rating

Voltage and Current Ratings

Transistor Type

DC Current Gain

Transition Frequency

Quality and Safety Features

RoHS3 Compliant

Suitable for high-temperature applications

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Power amplifiers

Switching circuits

Driver circuits

General-purpose amplification

Product Lifecycle

Currently available

No known plans for discontinuation

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

Robust and reliable performance

Compact and efficient package

Suitable for high-power and high-temperature applications

Fast switching capability for various circuit designs